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发明公开
EP2418680A1 INSULATED GATE BIPOLAR TRANSISTOR 审中-公开
双极晶体管麻醉剂异构体门

INSULATED GATE BIPOLAR TRANSISTOR
摘要：
An IGBT (1), which is capable of reducing on resistance by reducing channel mobility, includes: an n type substrate (11) made of SiC and having a main surface (11A) with an off angle of not less than 50° and not more than 65° relative to a plane orientation of {0001}; a p type reverse breakdown voltage holding layer (13) made of SiC and formed on the main surface (11A) of the substrate (11); an n type well region (14) formed to include a second main surface (13B) of the reverse breakdown voltage holding layer (13); an emitter region (15) formed in the well region (14) to include the second main surface (13B) and including a p type impurity at a concentration higher than that of the reverse breakdown voltage holding layer (13); a gate oxide film (17) formed on the reverse breakdown voltage holding layer (13); and a gate electrode (19) formed on the gate oxide film (17). In a region including an interface between the well region (14) and the gate oxide film (17), a high-concentration nitrogen region (22) is formed to have a nitrogen concentration higher than those of the well region (14) and the gate oxide film (17).
摘要（中）：

通过降低沟道迁移率能够降低导通电阻的IGBT（1）包括：由SiC制成的n型衬底（11），具有不小于50°的偏角的主表面（11A） 相对于{0001}的平面取向大于65°; 形成在基板（11）的主表面（11A）上的由SiC制成的p型反向击穿电压保持层（13）; 形成为包括反向击穿电压保持层（13）的第二主表面（13B）的n型阱区域（14）。 形成在所述阱区域（14）中以包括所述第二主表面（13B）并且包括浓度高于所述反向击穿电压保持层（13）的p型杂质的发射极区域（15）。 形成在所述反向击穿电压保持层（13）上的栅极氧化膜（17）; 和形成在栅氧化膜（17）上的栅电极（19）。 在包括阱区（14）和栅极氧化膜（17）之间的界面的区域中，形成氮浓度高于阱区（14）的高浓度氮区（22），并且 栅氧化膜（17）。

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