发明公开
EP2423356A4 PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE, PROCESS FOR PRODUCING EPITAXIAL WAFER, INDIUM-PHOSPHORUS SUBSTRATE, AND EPITAXIAL WAFER
审中-公开
用于生产磷化铟衬底METHOD FOR PRODUCING外延晶片，磷化铟SUBSTRATE AND外延晶片
- 专利标题： PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE, PROCESS FOR PRODUCING EPITAXIAL WAFER, INDIUM-PHOSPHORUS SUBSTRATE, AND EPITAXIAL WAFER
- 专利标题（中）： 用于生产磷化铟衬底METHOD FOR PRODUCING外延晶片，磷化铟SUBSTRATE AND外延晶片
-
申请号： EP10766881申请日： 2010-01-12
-
公开(公告)号： EP2423356A4公开(公告)日： 2014-06-11
- 发明人: OKITA KYOKO
- 申请人： SUMITOMO ELECTRIC INDUSTRIES
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 优先权： JP2009102018 2009-04-20
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B33/00 ; C30B33/10 ; H01L21/02 ; H01L21/205 ; H01L21/304
摘要：
The present invention affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and epitaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S1 through S3). The InP substrate is washed with sulfuric acid/hydrogen peroxide (Step S5). After the step of washing with sulfuric acid/hydrogen peroxide (Step S5), the InP substrate is washed with phosphoric acid (Step S6)
信息查询
IPC分类:
