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公开(公告)号：EP2532773A4
公开(公告)日：2013-12-11
申请号：EP10845240
申请日：2010-09-28
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公开(公告)号：EP2551891A4
公开(公告)日：2014-07-02
申请号：EP10848496
申请日：2010-12-20
发明人： HARADA SHIN , SASAKI MAKOTO , NISHIGUCHI TARO , OKITA KYOKO , WADA KEIJI , MIYAZAKI TOMIHITO
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/02008 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/7395
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3.发明公开PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE, PROCESS FOR PRODUCING EPITAXIAL WAFER, INDIUM-PHOSPHORUS SUBSTRATE, AND EPITAXIAL WAFER 审中-公开用于生产磷化铟衬底METHOD FOR PRODUCING外延晶片，磷化铟SUBSTRATE AND外延晶片
公开(公告)号：EP2423356A4
公开(公告)日：2014-06-11
申请号：EP10766881
申请日：2010-01-12
发明人： OKITA KYOKO
IPC分类号： C30B29/40 , C30B33/00 , C30B33/10 , H01L21/02 , H01L21/205 , H01L21/304
CPC分类号： C30B29/40 , C30B33/00 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02658
摘要： The present invention affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and epitaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S1 through S3). The InP substrate is washed with sulfuric acid/hydrogen peroxide (Step S5). After the step of washing with sulfuric acid/hydrogen peroxide (Step S5), the InP substrate is washed with phosphoric acid (Step S6)
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