An IGBT (100), which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate (1), a drift layer (3), a well region (4), an n + region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes: a base layer (10) made of silicon carbide and having p type conductivity; and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The base layer (10) has a p type impurity concentration exceeding 1 × 10 18 cm -3 .