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1.发明公开SUBSTRATE, SUBSTRATE PROVIDED WITH THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开底物，用薄膜，半导体元件及其制造方法半导体元件基板
公开(公告)号：EP2420599A4
公开(公告)日：2014-02-26
申请号：EP10764377
申请日：2010-04-06
发明人： HARADA SHIN , SASAKI MAKOTO , MASUDA TAKEYOSHI
IPC分类号： C30B29/36 , C23C16/32 , C23C16/42 , C30B25/20 , H01L21/02 , H01L21/205 , H01L21/329 , H01L21/336 , H01L21/337 , H01L21/338 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/80 , H01L29/808 , H01L29/812 , H01L29/861 , H01L29/872
CPC分类号： H01L29/808 , B24B7/17 , B24B7/228 , B24B37/08 , B24B37/10 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/0465 , H01L29/02 , H01L29/045 , H01L29/063 , H01L29/0657 , H01L29/1608 , H01L29/66068 , H01L29/78 , H01L29/7802 , H01L29/7813 , H01L29/8083 , H01L29/812 , H01L29/8122 , H01L29/8128 , H01L29/8611 , H01L29/872
摘要： A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate (1) according to the present invention has a main surface (1a) having a diameter of 2 inches or greater, a value for bow at the main surface (1a) being not smaller than -40 µm and not greater than -5 µm, and a value for warp at the main surface (1a) being not smaller than 5 µm and not greater than 40 µm. Preferably, a value for surface roughness Ra of the main surface (1a) of the substrate (1) is not greater than 1 nm and a value for surface roughness Ra of a main surface (1b) is not greater than 100 nm.
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公开(公告)号：EP2432001A4
公开(公告)日：2012-11-21
申请号：EP10774827
申请日：2010-04-27
IPC分类号： H01L21/02 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/20 , H01L29/04 , H01L29/16 , H01L29/66 , H01L29/739 , H01L29/78
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02529 , H01L21/2007 , H01L29/045 , H01L29/66068 , H01L29/7395 , H01L29/7802
摘要： An IGBT (100), which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate (1), a drift layer (3), a well region (4), an n + region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes: a base layer (10) made of silicon carbide and having p type conductivity; and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The base layer (10) has a p type impurity concentration exceeding 1 × 10 18 cm -3 .
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公开(公告)号：EP2551891A4
公开(公告)日：2014-07-02
申请号：EP10848496
申请日：2010-12-20
发明人： HARADA SHIN , SASAKI MAKOTO , NISHIGUCHI TARO , OKITA KYOKO , WADA KEIJI , MIYAZAKI TOMIHITO
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/02008 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/7395
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公开(公告)号：EP2400527A4
公开(公告)日：2013-05-01
申请号：EP10743665
申请日：2010-02-09
发明人： SASAKI MAKOTO , MASUDA TAKEYOSHI
IPC分类号： C30B29/36 , H01L21/02 , H01L23/544
CPC分类号： H01L29/0657 , C30B29/36 , H01L23/544 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L2223/54406 , H01L2223/5442 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10T83/04 , H01L2924/00
摘要： A SiC substrate includes a first orientation flat (12) parallel to the direction, and a second orientation flat (13) being in a direction intersecting the first orientation flat (12) and being different from the first orientation flat (12) in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.
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公开(公告)号：EP2432002A4
公开(公告)日：2012-11-21
申请号：EP10774828
申请日：2010-04-27
IPC分类号： H01L21/02 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/20 , H01L29/04 , H01L29/16 , H01L29/66 , H01L29/739 , H01L29/78
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02529 , H01L21/2007 , H01L29/045 , H01L29/66068 , H01L29/7395 , H01L29/7802
摘要： An IGBT (100), which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate (1), a drift layer (3), a well region (4), an n + region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes: a base layer (10) made of silicon carbide and having p type conductivity; and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The base layer (10) has a p type impurity concentration exceeding 1 × 10 18 cm -3 .
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6.发明公开SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开碳化硅，半导体装置及制造方法的碳化硅衬底
公开(公告)号：EP2432000A4
公开(公告)日：2012-11-21
申请号：EP10774826
申请日：2010-04-27
IPC分类号： H01L21/02 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/20 , H01L29/04 , H01L29/16 , H01L29/66 , H01L29/739 , H01L29/78
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02529 , H01L21/2007 , H01L29/045 , H01L29/66068 , H01L29/7395 , H01L29/7802
摘要： An IGBT (100), which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate (1), a drift layer (3), a well region (4), an n + region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes: a base layer (10) made of silicon carbide and having p type conductivity; and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The base layer (10) has a p type impurity concentration exceeding 1 × 10 18 cm -3 .
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7.发明公开PROCESS FOR PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE 审中-公开工艺用于生产和SILICIUMCARBIDEINZELKRISTALLS的碳化硅衬底
公开(公告)号：EP2584590A4
公开(公告)日：2015-11-04
申请号：EP11795440
申请日：2011-02-25
发明人： NISHIGUCHI TARO , HARADA SHIN , SASAKI MAKOTO
CPC分类号： H01L21/02631 , C30B23/025 , C30B23/063 , C30B23/066 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02658
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公开(公告)号：EP2532773A4
公开(公告)日：2013-12-11
申请号：EP10845240
申请日：2010-09-28
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9.发明公开SILICON CARBIDE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL 有权圣彼得堡维多利亚州ZER HERSTELLUNG DES SILICIUMCARBIDKRISTALLS
公开(公告)号：EP2565301A4
公开(公告)日：2013-11-27
申请号：EP11774697
申请日：2011-02-25
发明人： SASAKI MAKOTO
IPC分类号： C30B29/36 , C30B23/00 , C30B23/06 , H01L21/02 , H01L21/203
CPC分类号： C30B23/025 , C30B23/00 , C30B23/02 , C30B29/36 , C30B35/007 , H01L21/02378 , H01L21/02529 , H01L21/02631 , Y10T428/21 , Y10T428/24355 , Y10T428/2982
摘要： An SiC crystal (10) has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material (17). A first SiC crystal (11) is grown by sublimating the first source material (17) through heating and precipitating an SiC crystal. A second source material (12) is formed by crushing the first SiC crystal (11). A second SiC crystal (14) is grown by sublimating the second source material (12) through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.
摘要翻译： SiC结晶（10）的Fe浓度不高于0.1ppm，Al浓度不高于100ppm。 制造SiC晶体的方法包括以下步骤。 制备用于抛光的SiC粉末作为第一源材料（17）。 通过加热和沉淀SiC晶体使第一源材料（17）升华来生长第一SiC晶体（11）。 通过粉碎第一SiC晶体（11）形成第二源材料（12）。 通过加热和沉淀SiC晶体使第二源材料（12）升华来生长第二SiC晶体（14）。 因此，可以获得能够实现抑制质量下降的SiC晶体和制造SiC晶体的方法。
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公开(公告)号：EP2508653A4
公开(公告)日：2013-09-04
申请号：EP10833086
申请日：2010-11-12
发明人： NISHIGUCHI TARO , SASAKI MAKOTO , HARADA SHIN
CPC分类号： C30B29/36 , C30B23/025
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