发明公开
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： EP10821787.8申请日： 2010-07-08
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公开(公告)号： EP2487720A1公开(公告)日： 2012-08-15
- 发明人: WADA, Keiji , TAMASO, Hideto
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2009231647 20091005
- 国际公布： WO2011043116 20110414
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L21/28 ; H01L21/283 ; H01L21/336 ; H01L29/12 ; H01L29/417 ; H01L29/78
摘要：
A semiconductor device having a construction capable of achieving suppressed deterioration of electric characteristics in an insulating member is provided. An n- SiC layer (12), a source contact electrode (16) formed on a main surface of the n- SiC layer (12), a gate electrode (17) arranged at a distance from the source contact electrode (16) on the main surface of the n - SiC layer (12), and an interlayer insulating film (210) located between the source contact electrode (16) and the gate electrode (17) are provided. A rate of lowering in electric resistance in the interlayer insulating film (210) when heating to a temperature not higher than 1200°C is carried out while the source contact electrode (16) and the interlayer insulating film (210) are adjacent to each other is not higher than 5 %.
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