发明公开
EP2520622A1 Method for forming chalcogenide semiconductor film and photovoltaic device
审中-公开
Verfahren zum Formen von Chalkogenid-Halbleiterfolie und Photovoltaikvorrichtung
- 专利标题： Method for forming chalcogenide semiconductor film and photovoltaic device
- 专利标题（中）： Verfahren zum Formen von Chalkogenid-Halbleiterfolie und Photovoltaikvorrichtung
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申请号： EP12161787.2申请日： 2012-03-28
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公开(公告)号： EP2520622A1公开(公告)日： 2012-11-07
- 发明人: Liao, Yueh-Chun , Yang, Feng-Yu , Ting, Ching
- 申请人： DelSolar Co., Ltd.
- 申请人地址： No. 6 Kebei 2nd Rd. Zhunan Science Park Zhunan Township Miaoli County 35053 TW
- 专利权人： DelSolar Co., Ltd.
- 当前专利权人： DelSolar Co., Ltd.
- 当前专利权人地址： No. 6 Kebei 2nd Rd. Zhunan Science Park Zhunan Township Miaoli County 35053 TW
- 代理机构： Becker Kurig Straus
- 优先权： US201161483062P 20110506; US201113234161 20110916
- 主分类号： C09D5/24
- IPC分类号： C09D5/24 ; H01L31/0296 ; H01L31/032 ; H01L31/0392 ; C09D11/00
摘要：
A method for forming a chalcogenide semiconductor film (1220) and a photovoltaic device using the chalcogenide semiconductor film (1220) are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film (1220). The precursor solution includes a solvent (220, 420), metal chalcogenide nanoparticles (210, 310, 410) and at least one of metal ions (240, 340, 450) and metal complex ions (240, 330, 440) which are distributed on surfaces of the metal chalcogenide nanoparticles (210, 310, 410). The metals of the metal chalcogenide nanoparticles (210, 310, 410), the metal ions (240, 340, 450) and the metal complex ions (240, 330, 440) are selected from a group consisting of group I, group II, group III and group IV elements of the periodic table and include all metal elements of a chalcogenide semiconductor material.
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