发明公开
- 专利标题: Submount and method of manufacturing the same
- 专利标题(中): 基座及其制造方法
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申请号: EP12178594.3申请日: 2006-03-17
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公开(公告)号: EP2521173A2公开(公告)日: 2012-11-07
- 发明人: Oshika, Yoshikazu , Nakano, Masayuki
- 申请人: DOWA Electronics Materials Co., Ltd.
- 申请人地址: 14-1, Sotokanda 4-chome Chiyoda-ku Tokyo 101-0021 JP
- 专利权人: DOWA Electronics Materials Co., Ltd.
- 当前专利权人: DOWA Electronics Materials Co., Ltd.
- 当前专利权人地址: 14-1, Sotokanda 4-chome Chiyoda-ku Tokyo 101-0021 JP
- 代理机构: Serjeants LLP
- 优先权: JP2005079985 20050318; JP2005091941 20050328; JP2005105044 20050331; JP2005105045 20050331; JP2005105046 20050331
- 主分类号: H01L23/498
- IPC分类号: H01L23/498
摘要:
A submount (40) comprises a submount substrate (32), a substrate protective layer (35) formed on the submount substrate (32), an electrode layer (33) formed on the substrate protective layer (35), and a solder layer (34) formed on the electrode layer (33). The carbon concentration in at least one of the region adjacent to an interface formed between said submount substrate (32) and said substrate protective layer (35), the region adjacent to an interface formed between said substrate protective layer (35) and said electrode layer (33) and the region adjacent to an interface formed between said electrode layer (33) and said solder layer (34) is not more than 1 x 10 20 atoms / cm 3 .
公开/授权文献
- EP2521173A3 Submount and method of manufacturing the same 公开/授权日:2014-12-24
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