发明公开
EP2538444A1 SILICON CARBIDE INSULATED GATE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
审中-公开
圣地亚哥国家公民权利与政治权利国际公约
- 专利标题： SILICON CARBIDE INSULATED GATE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 圣地亚哥国家公民权利与政治权利国际公约
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申请号： EP11744541.1申请日： 2011-02-07
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公开(公告)号： EP2538444A1公开(公告)日： 2012-12-26
- 发明人: MASUDA, Takeyoshi , WADA, Keiji , HONAGA, Misako
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2010031507 20100216
- 国际公布： WO2011102254 20110825
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/336 ; H01L29/06 ; H01L29/78
摘要：
A termination configuration of a silicon carbide insulating gate type semiconductor device (100) includes a semiconductor layer (132) of a first conductivity type having a first main face (137), a gate electrode (142), and a source interconnection (101), as well as a circumferential resurf region (105). The semiconductor layer (132) includes a body region (133) of a second conductivity type, a source region (134) of the first conductivity type, a contact region (135) of the second conductivity type, and a circumferential resurf region (105) of the second conductivity type. A width of a portion of the circumferential resurf region (105) excluding the body region (133) is greater than or equal to 1/2 the thickness of at least the semiconductor layer (132). A silicon carbide insulating gate type semiconductor device (100) of high breakdown voltage and high performance can be provided.
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