发明公开
EP2544225A1 SEMICONDUCTOR DEVICE AND BONDING MATERIAL FOR SEMICONDUCTOR DEVICE 审中-公开
国际货币基金组织协定

  • 专利标题: SEMICONDUCTOR DEVICE AND BONDING MATERIAL FOR SEMICONDUCTOR DEVICE
  • 专利标题(中): 国际货币基金组织协定
  • 申请号: EP11750546.1
    申请日: 2011-02-24
  • 公开(公告)号: EP2544225A1
    公开(公告)日: 2013-01-09
  • 发明人: SUGANUMA KatsuakiKIM Seongjun
  • 申请人: Osaka University
  • 申请人地址: 1-1, Yamadaoka Suita-shi Osaka 565-0871 JP
  • 专利权人: Osaka University
  • 当前专利权人: Osaka University
  • 当前专利权人地址: 1-1, Yamadaoka Suita-shi Osaka 565-0871 JP
  • 代理机构: Weitzel, Wolfgang
  • 优先权: JP2010043666 20100301
  • 国际公布: WO2011108436 20110909
  • 主分类号: H01L21/52
  • IPC分类号: H01L21/52 B23K35/28 C22C18/00
SEMICONDUCTOR DEVICE AND BONDING MATERIAL FOR SEMICONDUCTOR DEVICE
摘要:
In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.
信息查询
0/0