公开(公告)号：EP2544225A1

公开(公告)日：2013-01-09

申请号：EP11750546.1

申请日：2011-02-24

申请人： Osaka University

发明人： SUGANUMA Katsuaki ,  KIM Seongjun

IPC分类号： H01L21/52 ,  B23K35/28 ,  C22C18/00

CPC分类号： C22C18/00 ,  B23K35/282 ,  B23K2201/40 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05187 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/325 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/15787 ,  H01L2924/05432 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/014

摘要： In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.

摘要翻译： 在根据本发明的半导体器件100中，半导体部件120堆叠在基板110上，半导体部件120和基板110通过主要成分为锌的半导体器件接合材料130接合在一起。 此外，在衬底110的表面和半导体部件120的表面中的至少一个上提供防止半导体器件接合材料130扩散的涂层。另外，涂层140被构造成使得屏障 层叠由氮化物，碳化物或碳氮化物构成的层141和由贵金属构成的保护层142。 此外，选择构成阻挡层141的氮化物，碳化物或碳氮化物的自由能小于构成设置在基板110中的绝缘层111的材料的自由能。