发明公开
EP2550562A4 PATTERN FORMING METHOD AND RESIST COMPOSITION
审中-公开
STRUKTURFORMUNGSVERFAHREN UND RESISTZUSAMMENSETZUNG
- 专利标题： PATTERN FORMING METHOD AND RESIST COMPOSITION
- 专利标题（中）： STRUKTURFORMUNGSVERFAHREN UND RESISTZUSAMMENSETZUNG
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申请号： EP11759653申请日： 2011-03-25
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公开(公告)号： EP2550562A4公开(公告)日： 2013-11-20
- 发明人: KATO KEITA , TARUTANI SHINJI , TSUCHIHASHI TORU , KAMIMURA SOU , ENOMOTO YUICHIRO , FUJII KANA , IWATO KAORU , KATAOKA SHOHEI , MIZUTANI KAZUYOSHI
- 申请人： FUJIFILM CORP
- 专利权人： FUJIFILM CORP
- 当前专利权人： FUJIFILM CORP
- 优先权： JP2011056712 2011-03-15; JP2010069670 2010-03-25
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; G03F7/039 ; G03F7/32 ; H01L21/027
摘要：
Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF−SPI (1)
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