发明公开
EP2560214A1 SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTION DEVICE, OPTICAL SENSOR DEVICE, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR WAFER
审中-公开
半导体晶片受光元件，受光元件的安排，混合检测设备，用于生产半导体晶片的光学传感器装置和方法
- 专利标题： SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTION DEVICE, OPTICAL SENSOR DEVICE, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR WAFER
- 专利标题（中）： 半导体晶片受光元件，受光元件的安排，混合检测设备，用于生产半导体晶片的光学传感器装置和方法
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申请号： EP10849867.6申请日： 2010-12-03
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公开(公告)号： EP2560214A1公开(公告)日： 2013-02-20
- 发明人: MORI, Hiroki , IGUCHI, Yasuhiro , INADA, Hiroshi , NAGAI, Youichi , MIURA, Kouhei , NAKAHATA, Hideaki , AKITA, Katsushi , ISHIZUKA, Takashi , FUJII, Kei
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2010092523 20100413
- 国际公布： WO2011129031 20111020
- 主分类号： H01L31/10
- IPC分类号： H01L31/10 ; H01L27/146
摘要：
A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an In x Ga 1-x As (0.38 ≤ x ≤ 0.68) layer and a GaAs 1-y Sb y (0.25 ≤ y ≤ 0.73) layer, and in the GaAs 1-y Sb y layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
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