公开(公告)号：EP2461374A1

公开(公告)日：2012-06-06

申请号：EP10806309.0

申请日：2010-07-07

申请人： Sumitomo Electric Industries, Ltd.

发明人： FUJII, Kei ,  ISHIZUKA, Takashi ,  AKITA, Katsushi ,  NAGAI, Youichi ,  TANABE, Tatsuya

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 本发明提供一种半导体装置的制造方法以及半导体装置，该半导体装置能够在维持良好的结晶性的同时高效地生长具有多个对的多量子阱结构。 本发明的半导体器件制造方法包括形成具有50对或更多对III-V族化合物半导体量子阱的多量子阱结构3的步骤。 在形成多量子阱结构3的步骤中，多量子阱结构由仅使用金属有机源（所有金属有机源MOVPE）的金属有机气相外延形成。

公开(公告)号：EP2560214B1

公开(公告)日：2020-03-11

申请号：EP10849867.6

申请日：2010-12-03

申请人： Sumitomo Electric Industries, Ltd.

发明人： MORI, Hiroki ,  IGUCHI, Yasuhiro ,  INADA, Hiroshi ,  NAGAI, Youichi ,  MIURA, Kouhei ,  NAKAHATA, Hideaki ,  AKITA, Katsushi ,  ISHIZUKA, Takashi ,  FUJII, Kei

IPC分类号： H01L31/10 ,  H01L27/146 ,  B82Y20/00 ,  H01L31/0304 ,  H01L27/144 ,  H01L31/0352

公开(公告)号：EP2590232A1

公开(公告)日：2013-05-08

申请号：EP11800611.3

申请日：2011-06-15

申请人： Sumitomo Electric Industries, Ltd.

发明人： AKITA, Katsushi ,  ISHIZUKA, Takashi ,  FUJII, Kei ,  NAKAHATA, Hideaki ,  NAGAI, Youichi ,  INADA, Hiroshi ,  IGUCHI, Yasuhiro

IPC分类号： H01L31/10

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 µm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 µm and 2.0 µm. The ratio of the sensitivity at the wavelength of 1.3 µm to the sensitivity at the wavelength of 2.0 µm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：EP2579337A1

公开(公告)日：2013-04-10

申请号：EP11789629.0

申请日：2011-05-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： FUJII, Kei ,  AKITA, Katsushi ,  ISHIZUKA, Takashi ,  NAKAHATA, Hideaki ,  IGUCHI, Yasuhiro ,  INADA, Hiroshi ,  NAGAI, Youichi

IPC分类号： H01L31/10

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z ≥ -0.4x + 24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个半导体器件和光学传感器器件具有减小的暗电流，并且检测性延伸到近红外线中较长的波长。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z‰¥-0.4x + 24.6。

公开(公告)号：EP2626913A1

公开(公告)日：2013-08-14

申请号：EP11830536.6

申请日：2011-09-28

申请人： Sumitomo Electric Industries, Ltd.

发明人： FUJII, Kei ,  ISHIZUKA, Takashi ,  AKITA, Katsushi ,  IGUCHI, Yasuhiro ,  INADA, Hiroshi ,  NAGAI, Youichi

IPC分类号： H01L31/10

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14652 ,  H01L29/15 ,  H01L31/105 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate 1, and includes a pixel P. The photodiode includes an absorption layer 3 of a type II MQW structure, which is located on the substrate 1. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers 3a and 3b. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer 3a has a higher potential of a valence band, is thinner than the thickness of the other layer 3b.

摘要翻译： 提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。 光电二极管形成在III-V族化合物半导体衬底1上，并且包括像素P.光电二极管包括位于衬底1上的II型MQW结构的吸收层3.MWW结构包括五十个或更多个 成对的两种不同类型的III-V族化合物半导体层3a和3b。 两个不同类型的III-V族化合物半导体层中的一个的厚度比层3b的厚度薄，该层3a具有较高的价带电位。

公开(公告)号：EP2626890A1

公开(公告)日：2013-08-14

申请号：EP11830608.3

申请日：2011-10-03

申请人： Sumitomo Electric Industries, Ltd.

发明人： FUJII, Kei ,  AKITA, Katsushi ,  ISHIZUKA, Takashi

IPC分类号： H01L21/205 ,  C23C16/30 ,  C30B25/10 ,  C30B29/40 ,  H01L31/10

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02387 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed.
The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425°C or more and 525°C or less.

摘要翻译： 本发明提供了在外延晶片，光电二极管等，其包括在含锑层和能够有效地制造搜索没有突出引起的产率降低的表面缺陷可以减少和杂质污染导致性能的劣化可以被抑制。 该生产方法包括在锑（Sb）上的基板1通过金属有机气相外延仅利用金属有机源生长含层的步骤; 和成长，含锑层上，以无锑层包括窗口层5，worin，从含锑层的生长到窗口层的生长完成的步骤中，将生长在执行的 的425℃或更大且525℃或更小的生长温度。

公开(公告)号：EP2560214A1

公开(公告)日：2013-02-20

申请号：EP10849867.6

申请日：2010-12-03

申请人： Sumitomo Electric Industries, Ltd.

发明人： MORI, Hiroki ,  IGUCHI, Yasuhiro ,  INADA, Hiroshi ,  NAGAI, Youichi ,  MIURA, Kouhei ,  NAKAHATA, Hideaki ,  AKITA, Katsushi ,  ISHIZUKA, Takashi ,  FUJII, Kei

IPC分类号： H01L31/10 ,  H01L27/146

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an In x Ga 1-x As (0.38 ≤ x ≤ 0.68) layer and a GaAs 1-y Sb y (0.25 ≤ y ≤ 0.73) layer, and in the GaAs 1-y Sb y layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 的光接收元件包括InP衬底上1，具有上MQW和位于InP衬底1，位于光接收层3上的接触层5上形成光接收层3，p型区6从A延伸 接触层5的光接收层，和p侧电极11只形成在与p型区域的欧姆接触没有的表面。 的光接收元件在DASS的特征在于模具MQW具有层叠结构，包括对一个在X嘎1-x As形成（12点38‰¤X‰¤0.68）层和GaAs 1-Y的Sb Y（0点25分‰¤ÿ‰ ¤0.73）层，和在所述GaAs 1-Y Sb的y层，在对InP衬底上侧上的部分中的Sb含量y大于在上相反侧的部分中的Sb含量y大。

公开(公告)号：EP2551908A1

公开(公告)日：2013-01-30

申请号：EP11759206.3

申请日：2011-03-10

申请人： Sumitomo Electric Industries, Ltd.

发明人： IGUCHI, Yasuhiro ,  INADA, Hiroshi ,  NAGAI, Youichi ,  NAKAHATA, Hideaki ,  AKITA, Katsushi ,  ISHIZUKA, Takashi ,  FUJII, Kei

IPC分类号： H01L27/14 ,  H01L31/10

CPC分类号： H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

摘要翻译： 本发明提供了一种光接收元件阵列等，具有在近红外区域中高的光接收灵敏度，对光学传感器装置，以及用于产生所述光接收元件阵列的方法。 一种光接收元件阵列55包括n型缓冲层2，在InP衬底1设置在具有II型MQW，设置在所述吸收层上的接触层5，并延伸到p型区域中的吸收层3上 n型缓冲层2到吸收层3，worin通过选择性扩散形成的p型区域与相邻的光通过的区域接收元件的p型区域分离并不受到选择性扩散，并且， 在n型缓冲层，pn结15形成交叉的面上的p型区域的p型载流子浓度和缓冲层的n型载流子浓度的。