Invention Publication
- Patent Title: ULTRATHIN NANOWIRE-BASED AND NANOSCALE HETEROSTRUCTURE-BASED THERMOELECTRIC CONVERSION STRUCTURES AND METHOD OF MAKING SAME
- Patent Title (中): 热电转换结构基于超薄纳米线和纳米异质结构及其制造方法
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Application No.: EP11772848.5Application Date: 2011-04-25
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Publication No.: EP2560917A2Publication Date: 2013-02-27
- Inventor: WU, Yue , ZHANG, Genqiang
- Applicant: Purdue Research Foundation
- Applicant Address: Office of Technology Commercialization 1281 Win Hentschel Boulevard West Lafayette, IN 47906 US
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: Office of Technology Commercialization 1281 Win Hentschel Boulevard West Lafayette, IN 47906 US
- Agency: Croston, David
- Priority: US327199P 20100423; US327192P 20100423
- International Announcement: WO2011133976 20111027
- Main IPC: C01B19/02
- IPC: C01B19/02 ; B82B3/00 ; B82B1/00 ; B82Y40/00
Abstract:
An ultrathin tellurium nanowire structure is disclosed, including a rod-like crystalline structure of tellurium, wherein the crystalline structure is defined by diameters of between 5 - 6 nm. In addition, an ultrathin tellurium-based nanowire structure is disclosed including a rod-like crystalline structure of one of lead telluride and bismuth telluride, wherein an ultrathin tellurium nanowire structure is used as a precursor to generate the rod-like crystalline structure. Furthermore, a nanoscale heterostructure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod- like portions, wherein the center rod-like portion is a tellurium-based nanowire structure and the octahedral structures are one of lead telluride, cadmium telluride, and bismuth telluride.
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