Invention Publication
EP2563720A1 PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
审中-公开
钙钛矿具有ANIONENGESTEUERTEN介电性能，薄膜电容器装置及其制造方法
- Patent Title: PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 钙钛矿具有ANIONENGESTEUERTEN介电性能，薄膜电容器装置及其制造方法
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Application No.: EP11774497.9Application Date: 2011-04-28
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Publication No.: EP2563720A1Publication Date: 2013-03-06
- Inventor: KOUTSAROFF, Ivoyl, P. , HIGAI, Shin'ichi , ANDO, Akira
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: 10-1, Higashikotari 1-chome Nagaokakyo-shi Kyoto 617-8555 JP
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: 10-1, Higashikotari 1-chome Nagaokakyo-shi Kyoto 617-8555 JP
- Agency: Laufhütte, Dieter
- Priority: US412893P 20101112; US328720P 20100428
- International Announcement: WO2011135439 20111103
- Main IPC: C01G23/00
- IPC: C01G23/00 ; H01L21/316 ; H01L21/822 ; H01L27/04
Abstract:
A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N
3- anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ΑΒ0
3.δ )
α - (ΑΒ0
3-δ.γ Ν
γ )
1-α . A represents a divalent element, B represents a tetravalent element, y satisfies 0.005 3- anions and the matrix of remaining oxide perovskite material.
3- anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ΑΒ0
3.δ )
α - (ΑΒ0
3-δ.γ Ν
γ )
1-α . A represents a divalent element, B represents a tetravalent element, y satisfies 0.005 3- anions and the matrix of remaining oxide perovskite material.
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