发明公开
- 专利标题: SEMICONDUCTOR DEVICE WITH THROUGH-SILICON VIAS
- 专利标题(中): 与Silicon-经文半导体器件
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申请号: EP11794972.7申请日: 2011-04-26
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公开(公告)号: EP2583303A1公开(公告)日: 2013-04-24
- 发明人: KIM, Jin-Ki
- 申请人: MOSAID Technologies Incorporated
- 申请人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 专利权人: MOSAID Technologies Incorporated
- 当前专利权人: MOSAID Technologies Incorporated
- 当前专利权人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 代理机构: UEXKÜLL & STOLBERG
- 优先权: US362448P 20100708; US355861P 20100617
- 国际公布: WO2011156887 20111222
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/488 ; H03K17/56 ; H05K10/00 ; G01R31/30
摘要:
Disclosed is a semiconductor device that comprises a plurality of through-silicon vias (TSVs), a signal line and a selective connector (1634-1, 1634-2, 1634-3, 1634-4) for causing the signal line to be either electrically connected to one of the TSVs or electrically isolated from all of the TSVs, based on a control signal (1654). Also disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group (1604), a plurality of signal lines connected to the primary TSV group, a redundant TSV group (1608) and connection circuitry (1620B) responsive to a control signal having a predetermined value to electrically connect the signal lines to the redundant TSV group (1608).
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