发明公开
EP2601655A2 GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
审中-公开
产生不可逆条件的位单元第一磁性隧道过渡的第二通道磁转变
- 专利标题： GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
- 专利标题（中）： 产生不可逆条件的位单元第一磁性隧道过渡的第二通道磁转变
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申请号： EP11752672.3申请日： 2011-08-03
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公开(公告)号： EP2601655A2公开(公告)日： 2013-06-12
- 发明人: RAO, Hari, M. , KIM, Jung, Pill , KANG, Seung, H. , ZHU, Xiaochun , KIM, Tae, Hyun , LEE, Kangho , LI, Xia , HSU, Wah, Nam , HAO, Wuyang , SUH, Jungwon , YU, Nicholas, K. , NOWAK, Matthew, Michael , MILLENDORF, Steven, M. , ASHKENAZI, Asaf
- 申请人： Qualcomm Incorporated
- 申请人地址： 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US849043 20100803
- 国际公布： WO2012018918 20120209
- 主分类号： G11C17/16
- IPC分类号： G11C17/16 ; G11C17/02 ; G11C11/16
摘要：
A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
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