公开(公告)号：EP2550612A2

公开(公告)日：2013-01-30

申请号：EP11711238.3

申请日：2011-03-22

申请人： Qualcomm Incorporated

发明人： HAO, Wuyang ,  KIM, Jung Pill ,  SUH, Jungwon

IPC分类号： G06F17/50 ,  G05F3/02 ,  G06F1/10

CPC分类号： G06F1/06 ,  H02M3/07 ,  H02M3/073 ,  H02M2003/077

摘要： A method and apparatus for providing a clock signal to a charge pump is disclosed. In a particular embodiment, the method includes providing a first clock signal to a first charge pump unit of a charge pump. The method further includes providing a second clock signal to a second charge pump unit of the charge pump. A low-to-high transition of the first clock signal occurs substantially concurrently with a high-to-low transition of the second clock signal. Only one clock signal may be at a logic high voltage level at any given time.

公开(公告)号：EP2601655B1

公开(公告)日：2019-01-02

申请号：EP11752672.3

申请日：2011-08-03

申请人： Qualcomm Incorporated

发明人： RAO, Hari M. ,  KIM, Jung Pill ,  KANG, Seung H. ,  ZHU, Xiaochun ,  KIM, Tae Hyun ,  LEE, Kangho ,  LI, Xia ,  HSU, Wah Nam ,  HAO, Wuyang ,  SUH, Jungwon ,  YU, Nicholas K. ,  NOWAK, Matthew Michael ,  MILLENDORF, Steven M. ,  ASHKENAZI, Asaf

IPC分类号： G11C17/16 ,  G11C17/02 ,  G11C11/16

公开(公告)号：EP2601655A2

公开(公告)日：2013-06-12

申请号：EP11752672.3

申请日：2011-08-03

申请人： Qualcomm Incorporated

发明人： RAO, Hari, M. ,  KIM, Jung, Pill ,  KANG, Seung, H. ,  ZHU, Xiaochun ,  KIM, Tae, Hyun ,  LEE, Kangho ,  LI, Xia ,  HSU, Wah, Nam ,  HAO, Wuyang ,  SUH, Jungwon ,  YU, Nicholas, K. ,  NOWAK, Matthew, Michael ,  MILLENDORF, Steven, M. ,  ASHKENAZI, Asaf

IPC分类号： G11C17/16 ,  G11C17/02 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C29/027

摘要： A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

摘要翻译： 在一个位单元产生具有第一磁隧道结（MTJ）和第二MTJ的非可逆状态的方法包括：将编程电压施加到所述位单元的所述第一MTJ不施加编程电压施加到所述位单元的第二MTJ。 一种存储器装置，包括：具有第一和MTJ配置成通过将编程信号到所述第一MTJ中选定的一个和所述位单元的第二MTJ生成在所述位单元的非可逆状态的第二MTJ和编程电路一个位单元。

公开(公告)号：EP2622604B1

公开(公告)日：2016-04-06

申请号：EP11767560.3

申请日：2011-09-28

申请人： Qualcomm Incorporated

发明人： HAO, Wuyang ,  SUH, Jungwon ,  LEE, Kangho ,  KIM, Tae Hyun ,  KIM, Jung Pill ,  KANG, Seung H.

IPC分类号： G11C11/16 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/003 ,  G11C2213/72 ,  G11C2213/74

公开(公告)号：EP2569772B1

公开(公告)日：2015-04-01

申请号：EP11721891.7

申请日：2011-05-09

申请人： Qualcomm Incorporated

发明人： RAO, Hari M. ,  KIM, Jung Pill ,  KIM, Taehyun ,  ZHU, Xiaochun ,  LEE, Kangho ,  HAO, Wuyang

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/1693

公开(公告)号：EP2622604A1

公开(公告)日：2013-08-07

申请号：EP11767560.3

申请日：2011-09-28

申请人： Qualcomm Incorporated

发明人： HAO, Wuyang ,  SUH, Jungwon ,  LEE, Kangho ,  KIM, Tae Hyun ,  KIM, Jung Pill ,  KANG, Seung H.

IPC分类号： G11C11/16 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/003 ,  G11C2213/72 ,  G11C2213/74

摘要： A resistance -based memory has a two-diode access device. In a particular embodiment, a method includes biasing a bit line (114) and a sense line (112) to generate a current through a resistance -based memory element (110) via a first diode (116) or a second diode (118). A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line.

公开(公告)号：EP2569772A1

公开(公告)日：2013-03-20

申请号：EP11721891.7

申请日：2011-05-09

申请人： Qualcomm Incorporated

发明人： RAO, Hari M. ,  KIM, Jung Pill ,  KIM, Taehyun ,  ZHU, Xiaochun ,  LEE, Kangho ,  HAO, Wuyang

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/1693

摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.