发明公开
- 专利标题： Nanopiezoelectric generator and method of manufacturing the same
- 专利标题（中）： 纳米压电发生器及其制造方法
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申请号： EP13150772.5申请日： 2013-01-10
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公开(公告)号： EP2615656A3公开(公告)日： 2014-07-02
- 发明人: Cha, Seung-nam , Kim, Sung-min , Sohn, Jung-inn
- 申请人： Samsung Electronics Co., Ltd
- 申请人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 代理机构： Greene, Simon Kenneth
- 优先权： KR20120003078 20120110
- 主分类号： H01L41/08
- IPC分类号： H01L41/08 ; H01L41/113 ; H01L41/18 ; H01L41/253 ; H01L41/29
摘要：
A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.
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