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    METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE
    2.
    发明公开
    METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE 审中-公开

    公开(公告)号：EP3203539A3

    公开(公告)日：2017-12-06

    申请号：EP17154121.2

    申请日：2017-02-01

    申请人： Seiko Epson Corporation

    发明人： FUKUZAWA, Yuma ,  FUKUDA, Shunya ,  SHIMADA, Masato ,  OTA, Mutsuhiko

    IPC分类号： H01L41/253 ,  H01L41/257

    CPC分类号： B41J2/1607 ,  B41J2/164 ,  H01L41/0973 ,  H01L41/257 ,  H01L41/297

    摘要： A method is provided for manufacturing a piezoelectric device including a piezoelectric element 300 that is disposed above a diaphragm 50 and that has a multilayer structure including a first electrode 60 disposed above the diaphragm, a piezoelectric layer 70 disposed on the first electrode, and a second electrode 80 disposed on the piezoelectric layer. The method includes forming the multilayer structure including the first electrode, the piezoelectric layer, and the second electrode above the diaphragm, forming a voltage application electrode 95 extending outwardly from an end of the second electrode to cover a region located above the piezoelectric layer in an inactive section 320 having no second electrode, applying a voltage between the first electrode and the second electrode, and removing the voltage application electrode 95.

    MULTI-LAYER PIEZOELECTRIC POLYMER FILM DEVICES AND METHODS
    3.
    发明公开
    MULTI-LAYER PIEZOELECTRIC POLYMER FILM DEVICES AND METHODS 有权
    DEVICES AND METHOD FOR多层压电聚合物膜

    公开(公告)号：EP3072169A1

    公开(公告)日：2016-09-28

    申请号：EP14864264.8

    申请日：2014-11-18

    申请人： 3M Innovative Properties Company

    发明人： SCHARDT, Craig R. ,  BONIFAS, Andrew P. ,  PATZMAN, Derek W.

    IPC分类号： H01L41/253 ,  H01L41/083 ,  H01L41/22

    摘要： A touch panel includes a touch sensor having a dielectric core layer disposed between first and second piezoelectric layers. Each piezoelectric layer comprises a poled piezoelectric polymer. The touch sensor further includes at least a first set of individually addressable electrodes disposed over the first piezoelectric layer and at least one second electrode disposed over the second piezoelectric layer. Circuitry is coupled to the first set of electrodes and the second electrode. The circuitry is configured to detect a change in an electrical signal of at least one electrode of the first set of electrodes referenced to the second electrode in response to a touch applied to the touch surface of the touch sensor.

    Nanopiezoelectric generator and method of manufacturing the same
    4.
    发明公开
    Nanopiezoelectric generator and method of manufacturing the same 审中-公开
    纳米压电发电机及其制造方法

    公开(公告)号：EP2615655A2

    公开(公告)日：2013-07-17

    申请号：EP12189105.5

    申请日：2012-10-18

    申请人： Samsung Electronics Co., Ltd

    发明人： Cha, Seung-nam ,  Kim, Sung-min ,  Sohn, Jung-inn

    IPC分类号： H01L41/08 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253 ,  H01L41/29

    CPC分类号： H01L41/29 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253

    摘要： A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.

    摘要翻译： 提供纳米压电发生器。 纳米压电发生器包括第一电极; 第二电极; 至少一个介于第一电极和第二电极之间的纳米结构，并且包括压电材料和第一载体; 以及浓度调节单元，其调节所述至少一个纳米结构中的第一载体的浓度。

    PIEZOELECTRIC THIN-FILM FILTER
    5.
    发明公开
    PIEZOELECTRIC THIN-FILM FILTER 有权
    PIEZOELEKTRISCHERDÜNNSCHICHTFILTER

    公开(公告)号：EP1895659A4

    公开(公告)日：2008-08-27

    申请号：EP06766541

    申请日：2006-06-09

    申请人： MURATA MANUFACTURING CO

    发明人： UMEDA KEIICHI ,  KAWAMURA HIDEKI

    IPC分类号： H03H9/54 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/253 ,  H03H9/17

    CPC分类号： H03H9/0095 ,  H03H9/009 ,  H03H9/6493

    摘要： To provide a piezoelectric thin-film filter including resonators connected in a lattice pattern, which can achieve large attenuation at frequencies away from a passband and improve steepness near two ends of the passband without involving an additional special step. Second resonators C_2 or first and third resonators C_1 and Cx_1 connected in parallel form series-arm resonators or parallel-arm resonators C_1 connected in a lattice pattern. The capacitance of each second resonator C_2 is larger than the capacitance of each first resonator C_1. The capacitance of each third resonator Cx_1 is substantially equal to the difference between the capacitance of the second resonator C_2 and the capacitance of the first resonator C_1. The resonant frequency of the first resonator C_1 is higher than the resonant frequency of the second resonator C_2. The anti-resonant frequency of the third resonator Cx_1 is higher than the resonant frequency of the second resonator C_2 and lower than the resonant frequency of the first resonator C_1.

    摘要翻译： 一种压电薄膜滤波器，其中谐振器以格子图形连接，并且其中可以在远离通带的频率处获得大的衰减量，而陡度可以在通带的两侧附近和其两侧得到改善，而无需增加任何特殊处理。 第一和第三谐振器（C_1，Cx_1）的第二谐振器（C_2）或并联连接分别构成以晶格图案连接的串联臂谐振器或并联臂谐振器（C_1）。 第二谐振器（C_2）各自具有比第一谐振器（C_1）更大的电容。 第三谐振器（Cx_1）的电容近似等于第二谐振器（C_2）和第一谐振器（C_1）之间的电容差。 第一谐振器（C_1）各自具有比第二谐振器（C_2）更高的谐振频率。 第三谐振器（Cx_1）的反谐振频率高于第二谐振器（C_2）的谐振频率并且低于第一谐振器（C_1）的谐振频率。