发明公开
- 专利标题： REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES
- 专利标题（中）： DRAM自我升级模式所需的电流减少
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申请号： EP11827743申请日： 2011-09-26
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公开(公告)号： EP2619763A4公开(公告)日： 2014-05-21
- 发明人: BAINS KULJIT S
- 申请人： INTEL CORP
- 专利权人： INTEL CORP
- 当前专利权人： INTEL CORP
- 优先权： US89008310 2010-09-24
- 主分类号： G11C11/401
- IPC分类号： G11C11/401 ; G06F12/00 ; G06F13/16 ; G11C7/04 ; G11C11/406 ; G11C11/4063
摘要：
Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.
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