发明公开
EP2625689A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) LAYOUT WITH UNIFORM PATTERN
有权
布局的磁读/写存储器(MRAM)具有均匀结构
- 专利标题: MAGNETIC RANDOM ACCESS MEMORY (MRAM) LAYOUT WITH UNIFORM PATTERN
- 专利标题(中): 布局的磁读/写存储器(MRAM)具有均匀结构
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申请号: EP11773945.8申请日: 2011-10-10
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公开(公告)号: EP2625689A1公开(公告)日: 2013-08-14
- 发明人: LEE, Kangho , KIM, Tae Hyun , LI, Xia , KIM, Jung Pill , KANG, Seung H.
- 申请人: Qualcomm Incorporated
- 申请人地址: 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人: Qualcomm Incorporated
- 当前专利权人: Qualcomm Incorporated
- 当前专利权人地址: 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构: Dunlop, Hugh Christopher
- 优先权: US901074 20101008
- 国际公布: WO2012048326 20120412
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; H01L27/02
摘要:
A large scale memory array includes a uniform pattern of uniformly sized dummy bit cells and active bit cells. Sub-arrays within the large scale memory array are separated by the dummy bit cells. Signal distribution circuitry is formed with a width or height corresponding to the width or height of the dummy bit cells so that the signal distribution circuitry occupies the same footprint as the dummy bit cells without disrupting the uniform pattern across the large scale array. Edge dummy cells of a similar size or larger than the standard size bit cells may be placed around the edge of the large scale array to further reduce pattern loading affects.
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