There are disclosed herein various implementations of a transistor having an increased breakdown voltage. Such a transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor. In some implementations, the curved drain finger electrode end may be extended beyond the source finger electrode beginning to achieve the increased breakdown voltage.