本发明适用于投射特别用于直接或间接写入光刻以及电子显微镜中的电子束的方法。 特别是对于低于50nm的关键尺寸或分辨率，必须校正由与靶相互作用的束电子的前向和后向散射产生的邻近效应。 点扩散函数与目标几何的卷积传统上用于此目的。 在现有技术中，所述点扩展函数使用高斯分布法则。 根据本发明，点扩展函数的至少一个分量是Voigt函数和/或接近Voigt函数的函数的线性组合，例如Pearson VII的函数。 在一些实施例中，一些功能集中在后向散射峰值。

The invention applies to a method of spraying an electron beam lithography used include direct and indirect writing, as well as electron microscopy. Especially for critical or resolutions smaller than 50 nm, proximity effects created by the forward scattering and backward electron beam interacting with the target must be corrected. traditionally used to do the convolution of a point spread function with the target geometry. In the prior art, said point spread function uses the laws of Gaussian distribution. According to the invention, at least one component of the point spread function is a linear combination of functions Voigt and / or function approaching Voigt functions, such as functions of Pearson VII. In some embodiments, some of the functions are centered on the radiation distribution peaks backwards.