发明公开
EP2656225A2 TWO-LEVEL SYSTEM MAIN MEMORY 审中-公开
主存两级系统

  • 专利标题: TWO-LEVEL SYSTEM MAIN MEMORY
  • 专利标题(中): 主存两级系统
  • 申请号: EP11851888.5
    申请日: 2011-11-18
  • 公开(公告)号: EP2656225A2
    公开(公告)日: 2013-10-30
  • 发明人: DAHLEN, Eric J.HINTON, Glenn J.RAMANUJAN, Raj K.
  • 申请人: Intel Corporation
  • 申请人地址: 2200 Mission College Blvd. M/S: RNB4-150 Santa Clara, CA 95052 US
  • 专利权人: Intel Corporation
  • 当前专利权人: Intel Corporation
  • 当前专利权人地址: 2200 Mission College Blvd. M/S: RNB4-150 Santa Clara, CA 95052 US
  • 代理机构: Goddar, Heinz J.
  • 优先权: US976545 20101222
  • 国际公布: WO2012087471 20120628
  • 主分类号: G06F12/00
  • IPC分类号: G06F12/00
TWO-LEVEL SYSTEM MAIN MEMORY
摘要:
Embodiments of the invention describe a system main memory comprising two levels of memory that include cached subsets of system disk level storage. This main memory includes "near memory" comprising memory made of volatile memory, and "far memory" comprising volatile or nonvolatile memory storage that is larger and slower than the near memory. The far memory is presented as "main memory" to the host OS while the near memory is a cache for the far memory that is transparent to the OS, thus appearing to the OS the same as prior art main memory solutions. The management of the two-level memory may be done by a combination of logic and modules executed via the host CPU. Near memory may be coupled to the host system CPU via high bandwidth, low latency means for efficient processing. Far memory may be coupled to the CPU via low bandwidth, high latency means.
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