发明授权
- 专利标题: GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
- 专利标题(中): 氮化镓烧结体或氮化镓模制制品及其制造方法
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申请号: EP11850044.6申请日: 2011-12-20
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公开(公告)号: EP2657208B1公开(公告)日: 2017-12-13
- 发明人: MESUDA, Masami , MATSUMARU, Keitaro , TAKAHASHI, Koyata , KIKUCHI, Ryou , SHIBUTAMI, Tetsuo
- 申请人: Tosoh Corporation
- 申请人地址: 4560, Kaisei-cho Shunan-shi, Yamaguchi 746-8501 JP
- 专利权人: Tosoh Corporation
- 当前专利权人: Tosoh Corporation
- 当前专利权人地址: 4560, Kaisei-cho Shunan-shi, Yamaguchi 746-8501 JP
- 代理机构: Vigand, Philippe
- 优先权: JP2010283165 20101220; JP2010284631 20101221
- 国际公布: WO2012086661 20120628
- 主分类号: C04B35/58
- IPC分类号: C04B35/58 ; C04B41/88 ; C23C14/34
摘要:
The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.
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