公开(公告)号：EP2290121B1

公开(公告)日：2014-03-12

申请号：EP09762490.2

申请日：2009-06-09

申请人： Tosoh Corporation

发明人： TODOKO, Shigehisa ,  TAMANO, Kimiaki ,  ITOH, Kenichi ,  SHIBUTAMI, Tetsuo

IPC分类号： C23C14/34

CPC分类号： H01J37/3491 ,  C23C14/081 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3426

公开(公告)号：EP2163662B1

公开(公告)日：2017-02-08

申请号：EP08790786.1

申请日：2008-07-01

申请人： Tosoh Corporation

发明人： TODOKO, Shigehisa ,  ITOH, Kenichi ,  SHIBUTAMI, Tetsuo

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/3414

公开(公告)号：EP2657208A1

公开(公告)日：2013-10-30

申请号：EP11850044.6

申请日：2011-12-20

申请人： Tosoh Corporation

发明人： MESUDA, Masami ,  MATSUMARU, Keitaro ,  TAKAHASHI, Koyata ,  KIKUCHI, Ryou ,  SHIBUTAMI, Tetsuo

IPC分类号： C04B35/58 ,  C04B41/88 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/58 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  C04B35/6455 ,  C04B37/026 ,  C04B41/009 ,  C04B41/515 ,  C04B41/88 ,  C04B2235/3286 ,  C04B2235/465 ,  C04B2235/5409 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6586 ,  C04B2235/662 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2237/12 ,  C04B2237/36 ,  C04B2237/407 ,  C22C29/16 ,  Y10T428/249921 ,  C04B41/4521 ,  C04B41/4523

摘要： The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.

摘要翻译： 本发明提供一种氮化镓烧结体和氮化镓成型品，它们不需要专门的设备就可以实现高密度和低氧含量。 根据第一实施方案，氮化镓烧结体的特征在于密度为2.5g / cm 3至小于5.0g / cm 3，并且（002）面与镓的氧化镓峰的强度比 可以获得通过X射线衍射分析确定的（002）面的氮化物的小于3％的峰。 根据第二实施例，一种金属镓浸渍的氮化镓模制品，其特征在于包括作为分离相存在的氮化镓相和金属镓相，其摩尔比Ga /（Ga + N）为 55％〜80％。

公开(公告)号：EP2290121B2

公开(公告)日：2018-03-21

申请号：EP09762490.2

申请日：2009-06-09

申请人： Tosoh Corporation

发明人： TODOKO, Shigehisa ,  TAMANO, Kimiaki ,  ITOH, Kenichi ,  SHIBUTAMI, Tetsuo

IPC分类号： C23C14/34

CPC分类号： H01J37/3491 ,  C23C14/081 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3426

摘要： Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm 2 or less per 50 cm 2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm 2 or less.

公开(公告)号：EP2290121A1

公开(公告)日：2011-03-02

申请号：EP09762490.2

申请日：2009-06-09

申请人： Tosoh Corporation

发明人： TODOKO, Shigehisa ,  TAMANO, Kimiaki ,  ITOH, Kenichi ,  SHIBUTAMI, Tetsuo

IPC分类号： C23C14/34

CPC分类号： H01J37/3491 ,  C23C14/081 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3426

摘要： Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule.
By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm 2 or less per 50 cm 2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm 2 or less.

摘要翻译： 提供了一种圆柱形陶瓷溅射靶，其显着减少了裂纹，碎片，异常放电和结节的发生。 通过将熔融接合材料填充到由圆筒状陶瓷靶材和圆筒状基材所形成的空腔内，从而使熔融接合材料从一端向圆筒轴方向的另一端依次开始冷却，进一步填充熔融接合剂 在冷却过程中在空腔中制造材料，制造圆柱形陶瓷溅射靶，其特征在于，通过接合材料的X射线照片观察，未存在接合材料的部分的总面积为每平方厘米10cm 2或更小 X射线照片面积为50cm 2，不存在接合材料的部分的最大面积为9cm 2以下。

公开(公告)号：EP2657208B1

公开(公告)日：2017-12-13

申请号：EP11850044.6

申请日：2011-12-20

申请人： Tosoh Corporation

发明人： MESUDA, Masami ,  MATSUMARU, Keitaro ,  TAKAHASHI, Koyata ,  KIKUCHI, Ryou ,  SHIBUTAMI, Tetsuo

IPC分类号： C04B35/58 ,  C04B41/88 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/58 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  C04B35/6455 ,  C04B37/026 ,  C04B41/009 ,  C04B41/515 ,  C04B41/88 ,  C04B2235/3286 ,  C04B2235/465 ,  C04B2235/5409 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6586 ,  C04B2235/662 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2237/12 ,  C04B2237/36 ,  C04B2237/407 ,  C22C29/16 ,  Y10T428/249921 ,  C04B41/4521 ,  C04B41/4523

摘要： The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.

公开(公告)号：EP2623480B1

公开(公告)日：2017-07-12

申请号：EP11829124.4

申请日：2011-09-27

申请人： Tosoh Corporation

发明人： KURAMOCHI, Hideto ,  IIGUSA, Hitoshi ,  SHIBUTAMI, Tetsuo

IPC分类号： C04B35/453 ,  C23C14/34 ,  H01B1/08 ,  H01B5/14 ,  H01B13/00

CPC分类号： H01B1/08 ,  C01G9/02 ,  C01G23/003 ,  C01P2002/52 ,  C01P2006/40 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/6262 ,  C04B35/62685 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3284 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35

公开(公告)号：EP3088374B1

公开(公告)日：2018-09-05

申请号：EP16171958.8

申请日：2011-12-20

申请人： Tosoh Corporation

发明人： MESUDA, Masami ,  MATSUMARU, Keitaro ,  TAKAHASHI, Koyata ,  KIKUCHI, Ryou ,  SHIBUTAMI, Tetsuo

IPC分类号： C04B35/58 ,  C04B41/88 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/58 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  C04B35/6455 ,  C04B37/026 ,  C04B41/009 ,  C04B41/515 ,  C04B41/88 ,  C04B2235/3286 ,  C04B2235/465 ,  C04B2235/5409 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6586 ,  C04B2235/662 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2237/12 ,  C04B2237/36 ,  C04B2237/407 ,  C22C29/16 ,  H01J37/3426 ,  H01J37/3429 ,  Y10T428/249921 ,  C04B41/4521 ,  C04B41/4523

摘要： The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.

公开(公告)号：EP3088374A1

公开(公告)日：2016-11-02

申请号：EP16171958.8

申请日：2011-12-20

申请人： Tosoh Corporation

发明人： MESUDA, Masami ,  MATSUMARU, Keitaro ,  TAKAHASHI, Koyata ,  KIKUCHI, Ryou ,  SHIBUTAMI, Tetsuo

IPC分类号： C04B35/58 ,  C04B41/88 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/58 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  C04B35/6455 ,  C04B37/026 ,  C04B41/009 ,  C04B41/515 ,  C04B41/88 ,  C04B2235/3286 ,  C04B2235/465 ,  C04B2235/5409 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6586 ,  C04B2235/662 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2237/12 ,  C04B2237/36 ,  C04B2237/407 ,  C22C29/16 ,  H01J37/3426 ,  H01J37/3429 ,  Y10T428/249921 ,  C04B41/4521 ,  C04B41/4523

摘要： The present invention provides a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. More particularly, the present invention provides a metal gallium-impregnated gallium nitride molded article which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.

摘要翻译： 本发明提供一种氮化镓模塑制品，它不需要专门的设备就可以实现高密度和低氧含量。 更具体地说，本发明提供了一种金属镓浸渍的氮化镓成型体，其特征在于包括作为分离相存在的氮化镓相和金属镓相，并且摩尔比Ga /（Ga + N） 55％〜80％。

公开(公告)号：EP2163662A1

公开(公告)日：2010-03-17

申请号：EP08790786.1

申请日：2008-07-01

申请人： Tosoh Corporation

发明人： TODOKO, Shigehisa ,  ITOH, Kenichi ,  SHIBUTAMI, Tetsuo

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/3414

摘要： To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced.
A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, θ represents an angle between 0° and 90°) satisfies 45° πR/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 µm.

摘要翻译： 为了提供圆柱形溅射靶，可以显着降低溅射过程中的裂纹。 一种圆柱形溅射靶，其中由ITO或AZO制成的圆柱形目标材料具有至少90％的相对密度; 其外圆周表面上的磨削方向与平行于其圆柱轴线的直线之间的角度（在这种角度之间，¸表示0°至90°之间的角度）满足45°<¸‰| 90°或tanθ> ÀR/ L（其中R是圆柱形目标材料的外径，L是圆柱形目标材料的长度）; 圆筒状靶材的外周面的表面粗糙度Ra为3μm以下。