发明公开
EP2696365A3 Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
审中-公开
半导体缓冲结构，使半导体器件和工艺用于使用所述半导体缓冲结构的半导体器件制造
- 专利标题： Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
- 专利标题（中）： 半导体缓冲结构，使半导体器件和工艺用于使用所述半导体缓冲结构的半导体器件制造
-
申请号： EP13179953.8申请日： 2013-08-09
-
公开(公告)号： EP2696365A3公开(公告)日： 2014-02-26
- 发明人: Tak, Young-jo , Kim, Jae-kyun , Kim, Joo-sung , Kim, Jun-youn , Lee, Jae-won , Choi, Hyo-ji
- 申请人： Samsung Electronics Co., Ltd
- 申请人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR
- 代理机构： Kuhnen & Wacker
- 优先权： KR20120087350 20120809; KR20130088249 20130725
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L33/00 ; H01L33/12
摘要：
Provided is a method of manufacturing a semiconductor device. The method includes preparing a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes Al x In y Ga 1-x-y N (0≤x x In y Ga 1-x-y N (0≤x
公开/授权文献
信息查询
IPC分类:
