发明公开
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
-
申请号: EP12715448.2申请日: 2012-02-17
-
公开(公告)号: EP2715524A2公开(公告)日: 2014-04-09
- 发明人: NAGAI, Yuji , INOUE, Atsushi , TAKEYAMA, Yoshikazu
- 申请人: Kabushiki Kaisha Toshiba, Inc.
- 申请人地址: 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 专利权人: Kabushiki Kaisha Toshiba, Inc.
- 当前专利权人: Kabushiki Kaisha Toshiba, Inc.
- 当前专利权人地址: 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 代理机构: HOFFMANN EITLE
- 优先权: JP2011125282 20110603
- 国际公布: WO2012164986 20121206
- 主分类号: G06F7/58
- IPC分类号: G06F7/58
摘要:
According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.
公开/授权文献
- EP2715524B1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2021-01-06
信息查询