发明公开
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： EP12805036.6申请日： 2012-05-25
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公开(公告)号： EP2725619A1公开(公告)日： 2014-04-30
- 发明人: MASUDA, Takeyoshi , HARADA, Shin , WADA, Keiji , HIYOSHI, Toru
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2011141430 20110627
- 国际公布： WO2013001949 20130103
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/20 ; H01L21/205 ; H01L21/336 ; H01L29/16 ; H01L29/78
摘要：
A substrate has a surface (SR) made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface (SR) of the substrate is constructed by alternately providing a first plane (S1) having a plane orientation of (0-33-8), and a second plane (S2) connected to the first plane (S1) and having a plane orientation different from the plane orientation of the first plane (S1). A gate insulating film is provided on the surface (SR) of the substrate. A gate electrode is provided on the gate insulating film.
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