发明公开
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： EP12814532.3申请日： 2012-05-25
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公开(公告)号： EP2736067A1公开(公告)日： 2014-05-28
- 发明人: MASUDA, Takeyoshi , HATAYAMA, Tomoaki
- 申请人： Sumitomo Electric Industries, Ltd. , National University Corporation Nara Institute of Science and Technology
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- 当前专利权人： Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2011158784 20110720
- 国际公布： WO2013011740 20130124
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L29/12 ; H01L29/78
摘要：
A method for manufacturing a MOSFET (1) includes the steps of: introducing an impurity into a silicon carbide layer (10); forming a carbon layer (81) in a surface layer portion of the silicon carbide layer (10) having the impurity introduced therein, by selectively removing silicon from the surface layer portion; and activating the impurity by heating the silicon carbide layer (10) having the carbon layer (81) formed therein.
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