发明授权
- 专利标题： N-CHANNEL AND P-CHANNEL FINFET CELL ARCHITECTURE
- 专利标题（中）： N沟道和P沟道鳍状器件结构
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申请号： EP12820395.7申请日： 2012-07-23
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公开(公告)号： EP2737540B1公开(公告)日： 2018-03-28
- 发明人: KAWA, Jamil , MOROZ, Victor , SHERLEKAR, Deepak
- 申请人： Synopsys, Inc.
- 申请人地址： 700 E. Middlefield Road Mountain View, CA 94043 US
- 专利权人： Synopsys, Inc.
- 当前专利权人： Synopsys, Inc.
- 当前专利权人地址： 700 E. Middlefield Road Mountain View, CA 94043 US
- 代理机构： D Young & Co LLP
- 优先权： US201113194862 20110729
- 国际公布： WO2013019457 20130207
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L27/02 ; G06F17/50 ; H01L27/092 ; H01L27/12 ; H01L23/528
摘要：
A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate, the second region having a second conductivity type. A patterned gate conductor layer including gate traces in the first and second regions, arranged over channel regions of the first and second sets of semiconductor fins is used for transistor gates. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and can include a plurality of floating power buses over the fins in the first and second regions.
公开/授权文献
- EP2737540A1 N-CHANNEL AND P-CHANNEL FINFET CELL ARCHITECTURE 公开/授权日：2014-06-04
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