发明公开
- 专利标题： TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS
- 专利标题（中）： 钨盖茨非平面TRANSISTORS
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申请号： EP11873428.4申请日： 2011-09-30
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公开(公告)号： EP2761662A1公开(公告)日： 2014-08-06
- 发明人: PRADHAN, Sameer S. , BERGSTROM, Daniel, B. , CHUN, Jin-Sung , CHIU, Julia
- 申请人： Intel Corporation
- 申请人地址： 2200 Mission College Boulevard Santa Clara, CA 95052 US
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, CA 95052 US
- 代理机构： Goddar, Heinz J.
- 国际公布： WO2013048449 20130404
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
公开/授权文献
- EP2761662B1 TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS 公开/授权日：2022-02-02
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