发明公开
EP2763184A1 INKS FOR THE IN-SITU PRODUCTION OF CHALCOGENS AND/OR CHALCOGENIDES THAT FORM SEMICONDUCTOR LAYERS, PRODUCTION METHOD THEREOF AND USE OF SAME
审中-公开
INK原位形成半导体层方法以及这种生产的使用chalcogenes和/或硫族化合物生产
- 专利标题： INKS FOR THE IN-SITU PRODUCTION OF CHALCOGENS AND/OR CHALCOGENIDES THAT FORM SEMICONDUCTOR LAYERS, PRODUCTION METHOD THEREOF AND USE OF SAME
- 专利标题（中）： INK原位形成半导体层方法以及这种生产的使用chalcogenes和/或硫族化合物生产
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申请号： EP12836775.2申请日： 2012-09-26
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公开(公告)号： EP2763184A1公开(公告)日： 2014-08-06
- 发明人: CARDÁ CASTELLÓ, Juan Bautista , ESCRIBANO LÓPEZ, Purificación , KRASSIMIROV TODOROV, Teodor , LINCOT, Daniel , CHASSAING, Elisabeth
- 申请人： Universitat Jaume I De Castellón , Centre National de la Recherche Scientifique (CNRS) , Electricité de France
- 申请人地址： Avda. de Vicent Sos Baynat, s/n 12006 - Castellón de la Plana ES
- 专利权人： Universitat Jaume I De Castellón,Centre National de la Recherche Scientifique (CNRS),Electricité de France
- 当前专利权人： Universitat Jaume I De Castellón,Centre National de la Recherche Scientifique (CNRS),Electricité de France
- 当前专利权人地址： Avda. de Vicent Sos Baynat, s/n 12006 - Castellón de la Plana ES
- 代理机构： Ungria López, Javier
- 优先权： ES201131580 20110930
- 国际公布： WO2013045731 20130404
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264
摘要：
The invention relates to an ink composition for the in-situ production of chalcogens and/or chalcogenides, characterised in that it comprises at least one chalcogenite compound having a formula selected from a group consisting of SeO 2 , M(SO 3 ) n , M(SeO 3 ) n and M(TeO 3 ) n , wherein 0.5≤n≤2 and M is at least one metal element. In addition, the invention relates to the inks produced using said composition, the production method thereof and the use of same for the in-situ preparation of semiconductor materials.
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