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1.发明公开INKS FOR THE IN-SITU PRODUCTION OF CHALCOGENS AND/OR CHALCOGENIDES THAT FORM SEMICONDUCTOR LAYERS, PRODUCTION METHOD THEREOF AND USE OF SAME 审中-公开INK原位形成半导体层方法以及这种生产的使用chalcogenes和/或硫族化合物生产
公开(公告)号：EP2763184A1
公开(公告)日：2014-08-06
申请号：EP12836775.2
申请日：2012-09-26
申请人： Universitat Jaume I De Castellón , Centre National de la Recherche Scientifique (CNRS) , Electricité de France
发明人： CARDÁ CASTELLÓ, Juan Bautista , ESCRIBANO LÓPEZ, Purificación , KRASSIMIROV TODOROV, Teodor , LINCOT, Daniel , CHASSAING, Elisabeth
IPC分类号： H01L31/0264
CPC分类号： H01L31/0322 , H01L21/02568 , H01L21/02628 , Y02E10/541 , Y02P70/521
摘要： The invention relates to an ink composition for the in-situ production of chalcogens and/or chalcogenides, characterised in that it comprises at least one chalcogenite compound having a formula selected from a group consisting of SeO 2 , M(SO 3 ) n , M(SeO 3 ) n and M(TeO 3 ) n , wherein 0.5≤n≤2 and M is at least one metal element. In addition, the invention relates to the inks produced using said composition, the production method thereof and the use of same for the in-situ preparation of semiconductor materials.
摘要翻译： 本发明涉及对原位生产黄铜矿资产和/或硫属化物的油墨组合物，它DASS包含具有选自下式的SeO由...组成2，M（SO 3）N M的至少一种化合物chalcogenite （SEO 3）n和M（3的TeO）N，worin 0.5‰¤n‰¤2和M是至少一种金属元素。 此外，本发明涉及使用所述组合物，其制造方法和用于原位制备半导体材料的使用的相同的产生的油墨。
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2.发明公开
公开(公告)号：EP2545209A1
公开(公告)日：2013-01-16
申请号：EP11713307.4
申请日：2011-02-17
IPC分类号： C25D3/56 , C25D3/58 , C25D9/08 , H01L31/0216 , H01L31/032 , H01L31/0336 , H01L31/18 , C25D9/06 , C25D11/00
CPC分类号： C25D3/56 , C25D3/58 , C25D9/08 , H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： A method for preparing an A-B-C2 or A2-(Dx, E1—x)-C4 absorber thin film for photovoltaic cells where 0≦̸x≦̸1, A is an element or mixture of elements selected within Group 11, B is an element or mixture of elements selected within Group 13, C is an element or mixture of elements selected within Group 16, D is an element or mixture of elements selected within Group 12, and E is an element or mixture of elements selected within Group 14. Said method includes: a step of electrochemically depositing oxide from elements selected from among Groups 11, 12, 13, and 14, a step of annealing in a reducing atmosphere, and a step of supplying an element from Group 16.
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3.发明授权
公开(公告)号：EP2545209B1
公开(公告)日：2015-04-22
申请号：EP11713307.4
申请日：2011-02-17
IPC分类号： C25D3/56 , C25D3/58 , C25D9/08 , H01L31/0216 , H01L31/032 , H01L31/0336 , H01L31/18 , C25D9/06 , C25D11/00
CPC分类号： C25D3/56 , C25D3/58 , C25D9/08 , H01L31/0322 , H01L31/0749 , Y02E10/541
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4.发明公开PROCÉDÉ ET DISPOSITIF D'ÉLECTRO-DÉPÔT EN GÉOMÉTRIE CYLINDRIQUE 审中-公开VERFAHREN UND VORRICHTUNG ZUR ELEKTROABSCHEIDUNG IN EINER ZYLINDRISCHEN GEOMETRIE
公开(公告)号：EP2984211A1
公开(公告)日：2016-02-17
申请号：EP14719044.1
申请日：2014-03-25
IPC分类号： C25D5/02 , C25D7/06 , C25D17/00 , C25D17/02 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10 , C25D5/00
CPC分类号： C25D7/12 , C25D5/003 , C25D5/028 , C25D5/04 , C25D5/10 , C25D5/50 , C25D7/0635 , C25D9/08 , C25D17/004 , C25D17/005 , C25D17/02 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10
摘要： A method and device for electrodeposition in cylindrical geometry. The invention relates to a method for electrochemically depositing a thin layer on a flexible substrate, comprising the following steps: -providing, in an electrolysis bath, a first closed cylinder in a second hollow cylinder, -applying the flexible substrate to one of the surfaces chosen from the outer surface of the first cylinder and the inner surface of the second cylinder, the flexible substrate forming a first electrode, -providing, in the electrolysis bath, a second electrode, and -applying a potential difference between the first electrode and the second electrode in order to electrodeposit the thin layer on the flexible substrate.
摘要翻译： 一种圆柱几何电沉积的方法和装置。 一种用于在柔性基板上电化学沉积薄层的方法，包括：在电解槽中提供第二中空圆筒中的第一封闭圆筒，将柔性基底施加到从第一圆柱体的外表面中选择的一个表面 并且所述第二柔性基板的内表面形成第一电极，在所述电解槽中提供第二电极，并且在所述第一电极和所述第二电极之间施加电位差，以将所述薄层电沉积在所述柔性基板上 基质。
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