发明公开
EP2770537A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
审中-公开
碳化硅半导体器件及其制造方法
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 碳化硅半导体器件及其制造方法
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申请号： EP12841109.7申请日： 2012-09-12
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公开(公告)号： EP2770537A1公开(公告)日： 2014-08-27
- 发明人: HIYOSHI, Toru , MASUDA, Takeyoshi , WADA, Keiji
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2011230447 20111020
- 国际公布： WO2013058037 20130425
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/12
摘要：
When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film (8T) is formed. A first electrode (12) is formed on the first side of the silicon carbide substrate (SB) at the element region (CL). A second electrode (14) is formed on a second side of the silicon carbide substrate (SB).
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