发明公开
EP2779244A3 Method of forming a HEMT semiconductor device and structure therefor
审中-公开
一种用于制造半导体HEMT装置及其结构的方法
- 专利标题： Method of forming a HEMT semiconductor device and structure therefor
- 专利标题（中）： 一种用于制造半导体HEMT装置及其结构的方法
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申请号： EP14158995.2申请日： 2014-03-11
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公开(公告)号： EP2779244A3公开(公告)日： 2016-10-05
- 发明人: Salih, Ali , Liu, Chun-Li , Grivna, Gordon
- 申请人： Semiconductor Components Industries, LLC
- 申请人地址： 5005 East McDowell Road Phoenix, AZ 85008 US
- 专利权人： Semiconductor Components Industries, LLC
- 当前专利权人： Semiconductor Components Industries, LLC
- 当前专利权人地址： 5005 East McDowell Road Phoenix, AZ 85008 US
- 代理机构： Clarke, Geoffrey Howard
- 优先权： US201361786582P 20130315; US201414174500 20140206
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/336 ; H01L29/66 ; H01L23/532 ; H01L23/498 ; H01L23/482 ; H01L23/522 ; H01L29/20 ; H01L21/768 ; H01L23/00 ; H01L21/683
摘要：
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
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