发明公开
EP2784422A2 Silicon member and method of producing the same 有权
TrägerplattefürAbscheidung undWärmebehandlungund Herstellungsverfahrendafür

Silicon member and method of producing the same
摘要:
A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.
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