发明公开
EP2784422A2 Silicon member and method of producing the same
有权
TrägerplattefürAbscheidung undWärmebehandlungund Herstellungsverfahrendafür
- 专利标题: Silicon member and method of producing the same
- 专利标题(中): TrägerplattefürAbscheidung undWärmebehandlungund Herstellungsverfahrendafür
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申请号: EP14161925.4申请日: 2014-03-27
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公开(公告)号: EP2784422A2公开(公告)日: 2014-10-01
- 发明人: Nakada, Yoshinobu
- 申请人: MITSUBISHI MATERIALS CORPORATION
- 申请人地址: 3-2, Ohtemachi 1-chome Chiyoda-ku Tokyo JP
- 专利权人: MITSUBISHI MATERIALS CORPORATION
- 当前专利权人: MITSUBISHI MATERIALS CORPORATION
- 当前专利权人地址: 3-2, Ohtemachi 1-chome Chiyoda-ku Tokyo JP
- 代理机构: Gille Hrabal
- 优先权: JP2013067952 20130328
- 主分类号: F27D5/00
- IPC分类号: F27D5/00 ; C03B25/08 ; G02F1/13
摘要:
A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.
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