发明公开
EP2787637A1 COMPOSITE SUBSTRATE AND MANUFACTURING M ETHOD THEREOF
有权
VERBUNDSUBSTRAT UND HERSTELLUNGSVERFAHRENDAFÜR
- 专利标题: COMPOSITE SUBSTRATE AND MANUFACTURING M ETHOD THEREOF
- 专利标题(中): VERBUNDSUBSTRAT UND HERSTELLUNGSVERFAHRENDAFÜR
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申请号: EP13840125.2申请日: 2013-11-11
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公开(公告)号: EP2787637A1公开(公告)日: 2014-10-08
- 发明人: HORI, Yuji , TAI, Tomoyoshi , IWASAKI, Yasunori , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
- 申请人: NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
- 申请人地址: 2-56, Suda-cho Mizuho-ku Nagoya-shi, Aichi 467-8530 JP
- 专利权人: NGK Insulators, Ltd.,NGK Ceramic Device Co., Ltd.
- 当前专利权人: NGK Insulators, Ltd.,NGK Ceramic Device Co., Ltd.
- 当前专利权人地址: 2-56, Suda-cho Mizuho-ku Nagoya-shi, Aichi 467-8530 JP
- 代理机构: TBK
- 优先权: JP2012250070 20121114
- 国际公布: WO2014077212 20140522
- 主分类号: H03H9/25
- IPC分类号: H03H9/25 ; H03H3/08
摘要:
The present invention provides a composite substrate comprising a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer containing argon and joining together the piezoelectric substrate and the support substrate. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer contains a larger amount of a constituent element of the support substrate than the first and second layers, and the second layer contains a larger amount of argon than the first and third layers.
公开/授权文献
- EP2787637B1 COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF 公开/授权日:2016-03-30
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