发明公开
- 专利标题: EDGE-EMITTING ETCHED-FACET LASERS
- 专利标题(中): 边缘蚀刻小面激光器
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申请号: EP12855851.7申请日: 2012-12-03
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公开(公告)号: EP2789060A1公开(公告)日: 2014-10-15
- 发明人: BEHFAR, Alex, A. , GREEN, Malcolm, R. , STAGARESCU, Cristian
- 申请人: Binoptics Corporation
- 申请人地址: 9 Brown Road Ithaca, New York 14850 US
- 专利权人: Binoptics Corporation
- 当前专利权人: Binoptics Corporation
- 当前专利权人地址: 9 Brown Road Ithaca, New York 14850 US
- 代理机构: Lawrence, John
- 优先权: US201161568383P 20111208; US201261619190P 20120402; US201213690792 20121130
- 国际公布: WO2013085845 20130613
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
公开/授权文献
- EP2789060B1 EDGE-EMITTING ETCHED-FACET LASERS 公开/授权日:2021-05-19
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