发明公开
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： EP12860644.9申请日： 2012-10-16
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公开(公告)号： EP2797117A1公开(公告)日： 2014-10-29
- 发明人: WADA, Keiji , HIYOSHI, Toru
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2011280650 20111222
- 国际公布： WO2013094297 20130627
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/336 ; H01L29/12 ; H01L29/78
摘要：
A silicon carbide substrate (30) includes: an n type drift layer (32) having a first surface (S1) and a second surface (S2) opposite to each other; a p type body region (33) provided in the first surface (S1) of the n type drift layer (32); and an n type emitter region (34) provided on the p type body region (33) and separated from the n type drift layer (32) by the p type body region (33). A gate insulating film (11) is provided on the p type body region (33) so as to connect the n type drift layer (32) and the n type emitter region (34) to each other. A p type Si collector layer (70) is directly provided on the silicon carbide substrate (30) to face the second surface (S2) of the n type drift layer (32).
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