- 专利标题： AIGalnN-based lasers produced using etched facet technology
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申请号： EP14176634.5申请日： 2006-06-20
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公开(公告)号： EP2797185B1公开(公告)日： 2018-09-05
- 发明人: Behfar, Alex A. , Schremer, Alfred, T. , Stagarescu, Cristian, B. , Vainateya, Nln
- 申请人： MACOM Technology Solutions Holdings, Inc.
- 申请人地址： 100 Chelmsford Street Lowell, Massachusetts 01851 US
- 专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人地址： 100 Chelmsford Street Lowell, Massachusetts 01851 US
- 代理机构： Stiel, Jürgen
- 优先权： US692583P 20050622
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/02 ; H01S5/028 ; B82Y20/00 ; H01S5/026 ; H01S5/10 ; H01S5/18 ; H01S5/22 ; H01S5/323 ; H01S5/343
摘要：
A method for fabricating a nitride-based semiconductor laser, comprising: forming a mask on a p-doped cap layer of a nitride-based semiconductor laser structure; said mask maintaining the conductivity of said cap layer; and using ion beam in excess of 500 V in CAIBE to form an etched facet in said laser structure.
公开/授权文献
- EP2797185A1 AIGalnN-based lasers produced using etched facet technology 公开/授权日：2014-10-29
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