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    GALLIUM NITRIDE MATERIAL DEVICES AND METHODS INCLUDING BACKSIDE VIAS
    9.
    发明公开
    GALLIUM NITRIDE MATERIAL DEVICES AND METHODS INCLUDING BACKSIDE VIAS 审中-公开

    公开(公告)号：EP3561883A1

    公开(公告)日：2019-10-30

    申请号：EP19172826.0

    申请日：2002-02-22

    申请人： MACOM Technology Solutions Holdings, Inc.

    发明人： Weeks, Warren ,  Piner, Edwin ,  Borges, Ricardo ,  Linthicum, Kevin

    IPC分类号： H01L33/00 ,  H01S5/323 ,  H01S5/02 ,  H01L33/38 ,  H01L29/417 ,  H01L29/80 ,  H01L47/02 ,  H01L29/861 ,  H01L29/06 ,  H01L33/32 ,  H01L29/20

    摘要： The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material (14) formed over a substrate (12), such as silicon. The device also may include one or more non-conducting layers (15) between the substrate (12) and the gallium nitride material (14) which can aid in the deposition of the gallium nitride material. A via (24) is provided which extends from the backside (22) of the device through the non-conducting layer(s) (15) to enable electrical conduction between an electrical contact (20) deposited within the via (21) and, for example, an electrical contact (16) on the topside of the device. Thus, devices of the invention may be vertically conducting. In other cases, the vias may be free of electrical contacts, for example, to enhance light extraction. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs (e.g., HFETs), Gunn-effect diodes, and varactor diodes, amongst others.