发明公开
- 专利标题： METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造碳化硅半导体器件的方法
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申请号： EP12864703.9申请日： 2012-11-27
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公开(公告)号： EP2804215A1公开(公告)日： 2014-11-19
- 发明人: HIYOSHI, Toru , MASUDA, Takeyoshi , HATAYAMA, Tomoaki
- 申请人： Sumitomo Electric Industries, Ltd. , National University Corporation Nara Institute of Science and Technology
- 申请人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人： Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- 当前专利权人： Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- 当前专利权人地址： 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2012003895 20120112
- 国际公布： WO2013105349 20130718
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/12 ; H01L29/739
摘要：
A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film (50) is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film (50) into the silicon carbide layer.
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