发明授权
- 专利标题： THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 与用于制造纳米结构和工艺在基板热电材料实现
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申请号： EP13755907.6申请日： 2013-02-19
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公开(公告)号： EP2822049B1公开(公告)日： 2016-11-02
- 发明人: KATO, Kunihisa , ADACHI, Chihaya , MIYAZAKI, Koji , HAYAKAWA, Teruaki
- 申请人： Kyushu University, National University Corporation , Lintec Corporation
- 申请人地址： 10-1, Hakozaki 6-chome Higashi-ku Fukuoka-shi, Fukuoka 812-8581 JP
- 专利权人： Kyushu University, National University Corporation,Lintec Corporation
- 当前专利权人： Kyushu University, National University Corporation,Lintec Corporation
- 当前专利权人地址： 10-1, Hakozaki 6-chome Higashi-ku Fukuoka-shi, Fukuoka 812-8581 JP
- 代理机构： Gille Hrabal
- 优先权： JP2012046838 20120302
- 国际公布： WO2013129189 20130906
- 主分类号： H01L35/32
- IPC分类号： H01L35/32 ; H01L35/16 ; H01L35/34
摘要：
The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.
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