发明公开
EP2823489A2 METHOD OF PRODUCING A FRESNEL ZONE PLATE FOR APPLICATIONS IN HIGH ENERGY RADIATION
审中-公开
VERFAHREN ZUR HERSTELLUNG EINER FRESNEL-ZONENPLATTEFÜRANWENDUNGEN在HOCHENERGETISCHER STRAHLUNG
- 专利标题： METHOD OF PRODUCING A FRESNEL ZONE PLATE FOR APPLICATIONS IN HIGH ENERGY RADIATION
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG EINER FRESNEL-ZONENPLATTEFÜRANWENDUNGEN在HOCHENERGETISCHER STRAHLUNG
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申请号： EP13707893.7申请日： 2013-03-07
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公开(公告)号： EP2823489A2公开(公告)日： 2015-01-14
- 发明人: SCHÜTZ, Gisela , GRÉVENT, Corinne , KESKINBORA, Kahraman , HIRSCHER, Michael
- 申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften
- 申请人地址： Hofgartenstrasse 8 80539 Munich DE
- 专利权人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften
- 当前专利权人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften
- 当前专利权人地址： Hofgartenstrasse 8 80539 Munich DE
- 代理机构： Hannke, Christian
- 优先权： EP12158669 20120308
- 国际公布： WO2013132024 20130912
- 主分类号： G21K1/06
- IPC分类号： G21K1/06
摘要：
The invention concerns to a method of producing a Fresnel Zone Plate (1) for applications in high energy radiation including the following steps: supply of a substrate (2) transparent for high energy radiation, deposition of a layer (3) of a metal, a metal alloy or a metal compound on a planar surface (4) of the substrate (2), calculating a three dimensional geometrical profile (5) with a mathematical model, setting up a dosage profile (6) for an ion beam of the ion beam lithography inverse to the calculated three dimensional geometrical profile (5) and milling a three dimensional geometrical profile (5) with concentric zones into the layer (3) with ion beam lithography by means of focused ion beam.
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