Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.