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    Flash memory device comprising a booster plate
    4.
    发明公开
    Flash memory device comprising a booster plate 有权
    Programmierverfahren einer Flash-Speichervorrichtung mit einerVerstärkerplatte

    公开(公告)号：EP2528096A1

    公开(公告)日：2012-11-28

    申请号：EP12181789.4

    申请日：2006-02-17

    申请人： SanDisk Technologies, Inc.

    发明人： Fang, Hao ,  Phat, Tuan ,  Higashitani, Masaaki ,  HEMINK, Gerrit Jan

    IPC分类号： H01L27/115 ,  H01L27/105

    CPC分类号： H01L27/11529 ,  G11C16/0483 ,  H01L27/105 ,  H01L27/11526

    摘要： A NAND flash memory device incorporates a unique booster plate design. The booster plate is biased during read and program operations and the coupling to the floating gates in many cases reduces the voltage levels necessary to program and read the charge stored in the gates. The booster plate also shields against unwanted coupling between floating gates. Self boosting, local self boosting, and erase area self boosting modes used with the unique booster plate further improve read/write reliability and accuracy. A more compact and reliable memory device can hence be realized according to the present invention.

    摘要翻译： NAND闪存器件采用独特的增压板设计。 升压板在读取和编程操作期间被偏置，并且在许多情况下耦合到浮动栅极降低了编程和读取存储在门中的电荷所需的电压电平。 升压板还可屏蔽浮动栅极之间的不必要的耦合。 自升压，局部自升压，以及独特升压板使用的擦除区域自增强模式进一步提高了读/写可靠性和精度。 因此，根据本发明可以实现更紧凑和可靠的存储器件。

    SELECTIVE MEMORY CELL PROGRAM AND ERASE
    5.
    发明公开
    SELECTIVE MEMORY CELL PROGRAM AND ERASE 有权
    选择性记忆单元进行编程和消光

    公开(公告)号：EP2467854A1

    公开(公告)日：2012-06-27

    申请号：EP10745708.7

    申请日：2010-08-17

    申请人： SanDisk Technologies, Inc.

    发明人： DONG, Yingda ,  KUO, Tien-chien ,  HEMINK, Gerrit Jan

    IPC分类号： G11C16/16 ,  G11C16/10 ,  G11C16/34

    CPC分类号： G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/30 ,  G11C16/3418 ,  G11C2211/5641

    摘要： Techniques are disclosed herein for programming memory arrays to achieve high program/erase cycle endurance. In some aspects, only selected word lines (WL) are programmed with other WLs remaining unprogrammed. As an example, only the even word lines are programmed with the odd WLs left unprogrammed. After all of the even word lines are programmed and the data block is to be programmed with new data, the block is erased. Later, only the odd word lines are programmed. The data may be transferred to a block that stores multiple bit per memory cell prior to the erase. In one aspect, the data is programmed in a checkerboard pattern with some memory cells programmed and others left unprogrammed. Later, after erasing the data, the previously unprogrammed part of the checkerboard pattern is programmed with remaining cells unprogrammed.

    DETECTING THE COMPLETION OF PROGRAMMING FOR NON-VOLATILE STORAGE
    6.
    发明公开
    DETECTING THE COMPLETION OF PROGRAMMING FOR NON-VOLATILE STORAGE 审中-公开
    编程语句对非挥发性内存检测功能

    公开(公告)号：EP2446442A1

    公开(公告)日：2012-05-02

    申请号：EP10726384.0

    申请日：2010-06-08

    申请人： SanDisk Technologies Inc.

    发明人： HEMINK, Gerrit Jan

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C11/56

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3454

    摘要： A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations (Vva, Vvb, Vvc) are performed to determine whether the non-volatile storage elements have reached their target condition to store the appropriate data. Programming can be stopped when all non-volatile storage elements have reached their target level or when the number of non-volatile storage elements that have not reached their target level is less than a number or memory cells that can be corrected using an error correction process during a read operation (or other operation). The number of non-volatile storage elements that have not reached their target level can be estimated by counting the number of non volatile storage elements that have not reached a condition (VvIc) that is different (e.g., lower) than the target level.