发明公开
- 专利标题： DEVICE WITH GRADED BARRIER LAYER
- 专利标题（中）： 设备与阶梯屏障
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申请号： EP13778187.8申请日： 2013-04-05
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公开(公告)号： EP2839508A1公开(公告)日： 2015-02-25
- 发明人: BROWN, David F. , MICOVIC, Miroslav
- 申请人： HRL Laboratories, LLC
- 申请人地址： 3011 Malibu Canyon Road Malibu, CA 90265-4799 US
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： 3011 Malibu Canyon Road Malibu, CA 90265-4799 US
- 代理机构： Farrington, Graham
- 优先权： US201213448348 20120416
- 国际公布： WO2013158385 20131024
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
摘要：
A device and a method of making a graded barrier layer on a group III-N HFET wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer.
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